X-ray diffraction studies of thin films and multilayer structures
- 31 December 1989
- journal article
- Published by Elsevier in Progress in Crystal Growth and Characterization
- Vol. 18, 21-66
- https://doi.org/10.1016/0146-3535(89)90024-5
Abstract
No abstract availableKeywords
This publication has 53 references indexed in Scilit:
- The Microstructure of High—Critical Current Superconducting FilmsScience, 1987
- Inhomogeneous lattice distortion in the heteroepitaxy of InAs on GaAsApplied Physics Letters, 1987
- X-ray diffraction of multilayers and superlatticesActa Crystallographica Section A Foundations of Crystallography, 1986
- Comment on ‘‘Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor-phase epitaxy’’ [J. Appl. Phys. 57, 249 (1985)]Journal of Applied Physics, 1986
- Combined use of ion backscattering and x-ray rocking curves in the analyses of superlatticesPhysical Review B, 1985
- Characterization of thin layers on perfect crystals with a multipurpose high resolution x-ray diffractometerJournal of Vacuum Science & Technology B, 1983
- X-ray double-crystal diffractometry of Ga1−xAlxAs epitaxial layersJournal of Crystal Growth, 1978
- Determination of the lattice constant of epitaxial layers of III-V compoundsJournal of Crystal Growth, 1978
- Lattice mismatch and crystal system in epitaxial garnet filmsJournal of Crystal Growth, 1974
- Calculated elastic constants for stress problems associated with semiconductor devicesJournal of Applied Physics, 1973