Temperature-dependent critical layer thickness for In0.36Ga0.64As/GaAs single quantum wells
- 25 February 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (8), 854-855
- https://doi.org/10.1063/1.104511
Abstract
A series of In0.36Ga0.64As/GaAs single quantum wells were grown by molecular beam epitaxy to investigate the dependence of the critical layer thickness (CLT) on growth temperature. The layers were grown between 410 and 590 °C. Photoluminescence was then used to determine the CLT as the onset of three-dimensional growth which occurs at 15 Å for 570 °C and at 55 Å when grown at 470 °C. Our results indicate a strong and nearly linear temperature dependence for the CLT.Keywords
This publication has 28 references indexed in Scilit:
- Growth of In Ga1− As on GaAs (001) by molecular beam epitaxyJournal of Crystal Growth, 1989
- Effects of strain and surface reconstruction on the kinetics of indium incorporation in MBE growth of InAsJournal of Crystal Growth, 1989
- Growth of highly strained InGaAs on GaAsApplied Physics Letters, 1988
- Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regimeApplied Physics Letters, 1988
- Summary Abstract: The growth of strained InGaAs on GaAs: Kinetics versus energeticsJournal of Vacuum Science & Technology B, 1988
- Growth and characterization of AlGaAs/InGaAs/GaAs pseudomorphic structuresJournal of Vacuum Science & Technology B, 1988
- Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructures [Appl. Phys. Lett. 4 7, 322 (1985)]Applied Physics Letters, 1986
- Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985
- Defects associated with the accommodation of misfit between crystalsJournal of Vacuum Science and Technology, 1975
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974