Channels of Cd diffusion and stoichiometry in CdTe grown by molecular beam epitaxy
- 12 January 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (2), 206-208
- https://doi.org/10.1063/1.120686
Abstract
By studying the diffusion of specially incorporated thin Mn markers in molecular beam epitaxy-grown CdTe, we can investigate quantitatively deviations from stoichiometry as well as the details of Cd diffusion in the crystal. In CdTe layers deficient in Cd, the diffusion proceeds through vacancies, with the activation energy of 2.1 eV, characteristic for bulk CdTe. In CdTe grown in excess Cd flux, the evaluated activation energy of 1.4 eV for Cd self-diffusion is characteristic to Te self-diffusion in bulk CdTe, which implies that the flow of Cd atoms is mediated by vacancies with formation of a virtual antisite defect. A striking correlation of the occurrence of the minimum of electrical resistivity in In-doped CdTe with nearly perfect stoichiometry with the minimum of the diffusivity of Mn provides further support of this interpretation.
Keywords
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