Indium doping of CdTe and Cd1−xZnxTe by molecular-beam epitaxy: Uniformly and planar-doped layers, quantum wells, and superlattices
- 1 October 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (7), 2927-2940
- https://doi.org/10.1063/1.351496
Abstract
CdTe and Cd1−xZnxTe layers and microstructures were doped with indium donors during their growth at low temperatures (200–220 °C) by molecular‐beam epitaxy under Cd overpressure. Uniform and planar doping of layers and local doping of quantum wells and superlattices are presented. Characterization techniques include secondary‐ion mass spectroscopy (SIMS), capacitance‐voltage and Hall‐effect measurements, optical spectroscopy, x‐ray double diffraction, and x‐ray photoelectron spectroscopy. In the range of indium concentrations 2×1016–1×1018 cm−3, the donor activation efficiency is 100% for uniform doping. A low‐temperature carrier mobility of up to 5300 cm2/V s is obtained. The highest measured carrier concentration is 1.3×1018 cm−3; at a higher doping level, strong compensation occurs, related to dopant migration and cadmium vacancy formation. Planar doping also yields ≊100% activation efficiency for moderate values of sheet density (≊1011 cm−2) but has the same limit of about 1018 cm−3 for total carrier concentration. High‐structural‐quality planar‐doped quantum wells and superlattices are obtained. Good localization of dopant is demonstrated by SIMS at low sheet density but at high concentration substantial migration of indium occurs.Keywords
This publication has 23 references indexed in Scilit:
- Indium doping of CdTe layers and CdTe/Cd1 − xZnxTe microstructuresJournal of Crystal Growth, 1992
- Luminescence characterization of CdTe:In grown by molecular beam epitaxyApplied Physics Letters, 1991
- The effects of laser illumination and high energy electrons on molecular-beam epitaxial growth of CdTeJournal of Applied Physics, 1991
- Electrical and structural assessment of CdTe and CdMnTe layers grown by MBE on InSb substratesJournal of Crystal Growth, 1990
- Photoassisted molecular beam epitaxy of wide gap II–VI heterostructuresJournal of Crystal Growth, 1990
- p-type arsenic doping of CdTe and HgTe/CdTe superlattices grown by photoassisted and conventional molecular-beam epitaxyJournal of Vacuum Science & Technology A, 1990
- Growth control of CdTe/CdZnTe (001) strained-layer superlattices by reflection high-energy electron diffraction oscillationsApplied Physics Letters, 1989
- Spectroscopic study of CdTe layers grown by molecular-beam epitaxy on (001) and (111) Cd0.96Zn0.04Te substratesJournal of Applied Physics, 1989
- Growth and properties of In-doped CdMnTe-CdTe superlatticesApplied Physics Letters, 1987
- Growth of high mobility n-type CdTe by photoassisted molecular beam epitaxyApplied Physics Letters, 1986