Liquid Phase Epitaxial Growth of High-Quality GaInAsSb/InAs
- 1 February 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (2R), 711-715
- https://doi.org/10.1143/jjap.32.711
Abstract
High-quality Ga1-x In x As1-y Sb y /InAs with mirror-smooth surfaces were grown at 650-595°C by means of Liquid Phase Epitaxy (LPE). The compositional and growth temperature dependences of the cutoff wavelength for epilayers were investigated. Van der Pauw measurements, optical microscopy, Fourie Transform IR (FTIR) spectroscopy, Electron Probe Microanalysis (EPMA), Secondary Ion Mass Spectroscopy (SIMS) and Photoluminescence (PL) spectroscopy were used to characterize the quality of epilayers. The results show that the purity of epilayers is considerably improved by doping Gd in the melt. Room-temperature electron mobility up to 30000 cm2/(V·s) with carrier density of 5.7×1015 cm-3 and full width at halfmaximum (FWHM) of the PL spectra as narrow as 12.45 meV, which are the best results so far for this material to our knowledge, have been achieved. The cutoff wavelengths of epilayers are between 3.4 and 5.0 mm at room temperature.Keywords
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