On the concentration dependence of the thermal ionisation energy of impurities in InP
- 1 March 1987
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (3), 177-178
- https://doi.org/10.1088/0268-1242/2/3/008
Abstract
It is shown that recently obtained data for the thermal ionisation energy of donors in InP exhibit the usual dependence on the concentration of ionised donor centres. It is suggested that the parameter in the semi-empirical relationship E = E0 - alpha N1/3 shows a definite correlation with the static dielectric constant in various semiconductors as predicted by a simple model based on Coulomb interactions.Keywords
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