Oxidation of AlGaAs layers for tapered apertures in vertical-cavity lasers
- 1 January 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (4), 300-301
- https://doi.org/10.1049/el:19970222
Abstract
By using step-graded Al compositions of epitaxial AlGaAs, we can form a tapered oxidation front due to the combination of rapid lateral oxidation in a higher Al content layer and slow transverse oxidation into adjacent lower Al content layers. A study of the oxidation behaviour of this epitaxial aperture layer demonstrates the feasibility of tapered dielectric apertures which have been predicted to provide much lower losses in vertical cavity lasers.Keywords
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