Characterization of Ga out-diffusion from GaAs into SiOxNy films during thermal annealing
- 15 December 1989
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (12), 5833-5836
- https://doi.org/10.1063/1.343603
Abstract
The out-diffusion of Ga atoms during thermal annealing from a GaAs substrate into an SiOxNy encapsulating film has been studied using secondary ion mass spectrometry. The concentration of Ga atoms detected within the SiOxNy encapsulant annealed at 850 °C is found to increase with increasing the oxygen content of the encapsulant. The results are well correlated with the concentration change of the electron trap EL5 (Ec−ET =0.42 eV) evaluated from deep-level transient spectroscopy. We conclude that the controlled Ga out-diffusion by SiOxNy capped annealing causes enhanced electrical activation of Si implants and the generation of the EL5 trap during thermal annealing is ascribed to the Ga out-diffusion.Keywords
This publication has 8 references indexed in Scilit:
- Electronic Structure, Total Energies, and Abundances of the Elementary Point Defects in GaAsPhysical Review Letters, 1985
- Nonalloyed ohmic contacts to Si-implanted GaAs activated using SiOxNy capped infrared rapid thermal annealingJournal of Applied Physics, 1985
- SiOxNy capped annealing for Si-implanted GaAsApplied Physics Letters, 1984
- The effects of processing conditions on the out-diffusion of oxygen from Czochralski siliconJournal of Applied Physics, 1983
- On the determination of the spatial distribution of deep centers in semiconducting thin films from capacitance transient spectroscopyJournal of Applied Physics, 1982
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Properties of vacancy defects in GaAs single crystalsJournal of Applied Physics, 1975
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974