Electrical properties of p-type CuInSe2 single crystals
- 16 December 1979
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 56 (2), K137-K140
- https://doi.org/10.1002/pssa.2210560260
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Electrical properties of CuGaTe2 epitaxial layersPhysica Status Solidi (a), 1979
- Epitaxial layers of CuInSe2 on GaAsThin Solid Films, 1978
- Electrical properties of n-type CuInSe2 single crystalsSolid State Communications, 1978
- Radiative recombination in melt-grown and Cd-implanted CuInSe2Journal of Applied Physics, 1976
- Growth and properties of vacuum deposited CuInSe2 thin filmsJournal of Vacuum Science and Technology, 1976
- Analysis of the electrical and luminescent properties of CuInSe2Journal of Applied Physics, 1975
- Electrical properties of CuGaS2 single crystalsJournal of Applied Physics, 1974
- Activation energy determination for non-compensated and partly compensated impurity levelsPhysica Status Solidi (a), 1974
- The fabrication of p and n type single crystals of CuInSe2Journal of Crystal Growth, 1973
- Electrical properties of CuInSe2 single crystalsSolid-State Electronics, 1973