Thin InAs epitaxial layers grown on (100) GaAs substrates by molecular beam deposition

Abstract

Thin heteroepitaxial layers of InAs have been grown on (100) GaAs substrates and buffer layers by molecular beam deposition in a UHV chamber. Smooth epitaxial layers as indicated by in situ MEED patterns have been obtained at substrate temperatures in the range 330–530 °C and SEM micrographs and electron channeling patterns taken ex situ have confirmed these properties. MEED observations also indicated that epitaxial growth can be obtained at considerably lower deposition temperatures. InAs films, 0.5–2.0 μm thick, grown between 330 and 530 °C had bulklike electrical properties with residual n‐type carrier concentrations in the range 5×10¹⁶ to 1×10¹⁸ cm⁻³, the lowest values occurring for depositions at 530 °C.