Preparation and Characterization of Highly Conductive (100 S/cm) Phosphorus Doped νc-Si:H Films Deposited Using the VHF-GD Technique
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Preparation of a-Si:H Films by VHF Plasma CVDMRS Proceedings, 1988
- Mechanisms of Plasma Induced Silicon Deposition and the Control of the Properties of the DepositMRS Proceedings, 1988
- Influence of plasma excitation frequency fora-Si:H thin film depositionPlasma Chemistry and Plasma Processing, 1987
- Influence of Plasma Excitation Frequency on Deposition Rate and on Film Properties for Hydrogenated Amorphous SiliconMRS Proceedings, 1987
- Evaluation of Boron and Phosphorus Doping Microcrystalline Silicon FilmsJapanese Journal of Applied Physics, 1984
- Properties of microcrystalline P doped Si:H filmsJournal of Non-Crystalline Solids, 1983
- ESR and electrical properties of P-doped microcrystalline SiPhilosophical Magazine Part B, 1983
- Novel effects of magnetic field on the silane glow dischargeApplied Physics Letters, 1980