Measurement of diffusion length in solar cells
- 1 June 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (6), 2582-2592
- https://doi.org/10.1063/1.1663633
Abstract
New procedures are described for analyzing diffusion length measurements obtained by using several methods which, in the past, have shown inconsistent results. These procedures consist of a microwave photoconductive decay method and three techniques in which carriers, generated by γ rays, 1‐MeV electrons, or ir light, are collected by a p‐n junction. Special attention is given to measurements of solar cells in which the sample thickness may be comparable to the diffusion length. A theoretical analysis of each method is presented, as well as the results of a study in which a set of solar cells with a wide range of diffusion lengths was measured. It is shown that results from all methods are consistent over the entire range. A discussion of the advantages and disadvantages of the various methods is also included.Keywords
This publication has 14 references indexed in Scilit:
- Minority Carrier Recombination in Neutron Irradiated SiliconIEEE Transactions on Nuclear Science, 1969
- Proton-Neutron Damage Equivalence in Si and Ge SemiconductorsIEEE Transactions on Nuclear Science, 1963
- Diffusion Length Measurement by Means of Ionizing RadiationBell System Technical Journal, 1962
- Spectral Response of Solar CellsJournal of Applied Physics, 1961
- Microwave Techniques in Measurement of Lifetime in GermaniumJournal of Applied Physics, 1959
- Irradiation of P-N Junctions with Gamma Rays: A Method for Measuring Diffusion LengthsProceedings of the IRE, 1958
- Convection and Film Instability Copper Anodes in Hydrochloric AcidJournal of the Electrochemical Society, 1958
- Measurement of Minority Carrier Lifetime in SiliconJournal of Applied Physics, 1956
- Einfluß von Diffusionslänge und Oberflächenrekombination auf den Sperrschicht-Photoeffekt an GermaniumThe European Physical Journal A, 1955
- Volume and Surface Recombination Rates for Injected Carriers in GermaniumJournal of Applied Physics, 1954