GaAs/GaAs1−ySby superlattice light emitting diodes
- 15 May 1984
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (10), 3843-3845
- https://doi.org/10.1063/1.332894
Abstract
We present the first report of light emitting diodes fabricated with GaAs/GaAs1−ySby superlattice active regions. Several device structures are investigated, including devices with and without AlxGa1−xAs confining layers. Preliminary measurements indicate peak optical intensities may be obtained at wavelengths near 1 μm, with an associated full width at half maximum ∼100 meV at 300 K. Room temperature forward I‐V characteristics indicate an ideality factor of approximately two for these devices. Quantum efficiencies of ∼0.1% have been obtained for continuous operation.Keywords
This publication has 9 references indexed in Scilit:
- Optical studies of InxGa1−xAs-GaAs strained multiquantum well structuresApplied Physics Letters, 1983
- Doping and transport studies in InxGa1−xAs/GaAs strained-layer superlatticesJournal of Vacuum Science & Technology B, 1983
- Optical transmission in GaSb–AlSb superlatticesJournal of Vacuum Science & Technology B, 1983
- Continuous 300-K laser operation of strained superlatticesApplied Physics Letters, 1983
- Incorporation of Sb in GaAs1−xSbx (x<0.15) by molecular beam epitaxyElectronics Letters, 1983
- Electronic structure of GaAsxP1−x/GaP strained-layer superlattices with x<0.5Journal of Vacuum Science and Technology, 1982
- Molecular beam epitaxy growth of (Al, Ga)As/GaAs heterostructuresJournal of Crystal Growth, 1982
- Back-surface emitting GaAsxSb1−x LED’s (λ=1.0 μm) prepared by molecular-beam epitaxyApplied Physics Letters, 1977
- Defects in epitaxial multilayersJournal of Crystal Growth, 1976