Stacking faults in WSi2: Resistivity effects

Abstract

Films of WSi₂ initially deposited in an amorphous form have been known to display an unexpected resistivity maximum when annealed at a temperature corresponding to the transition from the low‐temperature hexagonal structure to the high‐temperature tetragonal structure. It is shown that the resistivity maximum is due to an extremely high (5×10⁶/cm) density of stacking faults. Thus, at least one of the scattering defects which contribute to the relatively high resistivity of WSi₂ films has been identified.