Dielectrically-bonded long wavelength vertical cavity laser on GaAs substrates using strain-compensated multiple quantum wells
- 1 December 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 6 (12), 1400-1402
- https://doi.org/10.1109/68.392231
Abstract
We present a novel low temperature bonding technique for fabricating long wavelength vertical cavity surface emitting lasers (VCSEL's). The technique relies on a 750 /spl Aring/-thick intermediate spin-on glass layer to join a highly efficient InP-based InGaAs-InGaAsP strain-compensated multiple quantum well (SC-MQW) gain medium on a GaAs substrate. We fabricated the device on GaAs in order to take advantage of highly reflective AlAs-GaAs Bragg reflectors. The optically-pumped device has a low threshold pump power of 4.2 kW/cm 2 at room temperature and operates at a wavelength of 1.44 μm.Keywords
This publication has 15 references indexed in Scilit:
- Photopumped long wavelength vertical-cavity surface-emitting lasers using strain-compensated multiple quantum wellsApplied Physics Letters, 1994
- Low threshold, room temperature pulsed operation of 1.5 /spl mu/m vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layerIEEE Photonics Technology Letters, 1994
- Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangementApplied Physics Letters, 1993
- Van der Waals bonding of GaAs on Pd leads to a permanent, solid-phase-topotaxial, metallurgical bondApplied Physics Letters, 1991
- Strain-compensated strained-layer superlattices for 1.5 μm wavelength lasersApplied Physics Letters, 1991
- Fabrication of a GaAs-AlGaAs GRIN-SCH SQW laser diode on silicon by epitaxial lift-offIEEE Photonics Technology Letters, 1991
- Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substratesApplied Physics Letters, 1990
- Room-temperature photopumped operation of an InGaAs-InP vertical cavity surface-emitting laserApplied Physics Letters, 1990
- Extreme selectivity in the lift-off of epitaxial GaAs filmsApplied Physics Letters, 1987
- Wafer bonding for silicon-on-insulator technologiesApplied Physics Letters, 1986