Electric properties and distribution of sulfur implants in GaAs

Abstract

The electrical properties of sulfur-implanted GaAs have been studied in detail using the Hall effect/sheet resistivity measurement technique for various ion doses, ion energies, and annealing temperatures. The electrical activation efficiency is found to increase with annealing temperature at a given dose and to decrease with increasing ion dose at a given ion energy for the ranges investigated. At a dose of 4×1013 cm−2, the electrical activation increases with ion energy up to 300 keV and then decreases with further increase in ion energy. A maximum activation efficiency study of secondary ion mass spectroscopy (SIMS) atomic profiles and electrical carrier profiles has also been made. The electrical profiles are in good agreement with the SIMS profiles in the deep side of the active layers, where there is no significant implantation damage.