Excitons in crystalline and amorphous SiO2: formation, relaxation and conversion to Frenkel pairs
- 1 November 1994
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 179, 194-201
- https://doi.org/10.1016/0022-3093(94)90697-1
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Models of the self-trapped exciton and nearest-neighbor defect pair inPhysical Review B, 1990
- Effects of Proton Implantation on Amorphous SiO2 Predamaged by Si ImplantationJapanese Journal of Applied Physics, 1990
- Defect formation in insulators under dense electronic excitationRadiation Effects and Defects in Solids, 1989
- Anomalous Defect Processes in Silicon-Implanted SiO2Japanese Journal of Applied Physics, 1989
- Threshold energy for photogeneration of self-trapped excitons in SiPhysical Review B, 1989
- Correlated defect creation and dose-dependent radiation sensitivity in amorphousPhysical Review B, 1989
- Selective O–H Bond Cleavage in the Radiolysis of QuartzJournal of the American Ceramic Society, 1986
- PLENARY SESSIONThermoluminescence and lattice defects in alkali halidesLe Journal de Physique Colloques, 1980
- High field electronic properties of SiO2Solid-State Electronics, 1978
- Paramagnetic Spectra ofCenters in Crystalline QuartzPhysical Review B, 1963