A comparison of LEED intensity data from chemically polished and cleaved GaAs(110) surfaces
- 2 December 1977
- journal article
- Published by Elsevier in Surface Science
- Vol. 69 (2), 735-740
- https://doi.org/10.1016/0039-6028(77)90151-0
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Surface structures of compound semiconductorsJournal of Vacuum Science and Technology, 1977
- Approach to structure determination of compound semiconductor surfaces by kinematical LEED calculations: GaAs(110) and ZnSe(110)Journal of Vacuum Science and Technology, 1977
- Si(111) 7×7 surface structureJournal of Vacuum Science and Technology, 1977
- Some thoughts on the existence of empty surface states and the effect of surface order on sorptionJournal of Vacuum Science and Technology, 1977
- Atomic Structure of the Si(111) 7×7 SurfacePhysical Review Letters, 1977
- LEED intensity analysis and electron spectroscopy of ZnSe(110)Journal of Vacuum Science and Technology, 1977
- Semiconductor Surface Reconstruction: The Rippled Geometry of GaAs(110)Physical Review Letters, 1976
- A comparison of some important surface properties of elemental and tetrahedrally coordinated compound semiconductorsC R C Critical Reviews in Solid State Sciences, 1975
- Surface state band on GaAs (110) faceApplied Physics Letters, 1974
- Low-Energy Electron-Diffraction Study of the Cleaved (110) Surfaces of InSb, InAs, GaAs, and GaSbJournal of Applied Physics, 1964