Model of SiO2 film growth on Si in oxygen microwave discharge
- 16 May 1976
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 35 (1), 291-301
- https://doi.org/10.1002/pssa.2210350131
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- A method of formation of thin oxide films on silicon in a microwave magnetoactive oxygen plasmaJournal of Physics D: Applied Physics, 1975
- Charge Phenomena in dc Reactively Sputtered SiO2 FilmsJournal of Applied Physics, 1968
- Electrical Properties of Vapor-Deposited Silicon Nitride and Silicon Oxide Films on SiliconJournal of the Electrochemical Society, 1968
- Silicon Oxide Films Grown in a Microwave DischargeJournal of Applied Physics, 1967
- The properties of plasma-grown SiO2 filmsSurface Science, 1967
- Silicon Oxidation in an Oxygen Plasma Excited by MicrowavesJournal of Applied Physics, 1965
- Effect of an Electric Field on Silicon OxidationThe Journal of Chemical Physics, 1962