Accelerated aging of 100-mW cw multiple-stripe GaAlAs lasers grown by metalorganic chemical vapor deposition
- 15 January 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (2), 118-120
- https://doi.org/10.1063/1.95705
Abstract
Lifetime characteristics of multiple‐stripe, multi‐quantum‐well lasers operating in the 810‐nm wavelength region at 100 mW cw and heat sink temperatures of 30, 70, and 100 °C are reported. Three failure modes were identified as dark line defect formation during early burn‐in, gradual degradation at lower temperatures, and thermal resistance increases for long‐term, high‐temperature testing. Based upon gradual degradation data, the median operating life at 30 °C is projected to be 22 000 h, with a mean time to failure of 31 000 h. Actual extended life testing at 30 °C supports the validity of this projection.Keywords
This publication has 16 references indexed in Scilit:
- Phase-locked (GaAl)As laser diode emitting 2.6 W CW from a single mirrorElectronics Letters, 1983
- Analysis of deterioration in In solder for GaAlAs DH lasersApplied Physics Letters, 1979
- Acceleration of the gradual degradation in (GaAl)As double-heterostructure lasers as an exponent of the value of the driving currentJournal of Applied Physics, 1979
- A statistical study of the reliability of oxide-defined stripe cw lasers of (AlGa)AsJournal of Applied Physics, 1979
- Deep level associated with the slow degradation of GaAlAs DH laser diodesApplied Physics Letters, 1978
- Room-temperature operation of Ga(1−x)AlxAs/GaAs double-heterostructure lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1977
- Statistical characterization of the lifetimes of continuously operated (Al,Ga)As double-heterostructure lasersApplied Physics Letters, 1976
- Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasersJournal of Applied Physics, 1974
- cw degradation at 300°K of GaAs double-heterostructure junction lasers. I. Emission spectraJournal of Applied Physics, 1973
- SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATESApplied Physics Letters, 1968