Light-induced metastable defects in hydrogenated amorphous silicon
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 77-78, 363-372
- https://doi.org/10.1016/0022-3093(85)90676-3
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Kinetics of the Staebler–Wronski effect in hydrogenated amorphous siliconApplied Physics Letters, 1984
- Failure of reciprocity in light-induced changes in hydrogenated amorphous silicon alloysApplied Physics Letters, 1984
- Single and double carrier injection in A-Si:HJournal of Non-Crystalline Solids, 1984
- Study of light-induced creation of defects in a-Si:H by means of single and dual-beam photoconductivityJournal of Non-Crystalline Solids, 1983
- Staebler-Wronski effects in hydrogenated amorphous Si1−xGexSolar Cells, 1983
- Observation of field quenching of photo-induced effects in hydrogenated amorphous siliconSolid State Communications, 1983
- Stability of n-i-p amorphous silicon solar cellsApplied Physics Letters, 1981
- Light-induced dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1981
- New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous SiliconJapanese Journal of Applied Physics, 1980
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977