Nano-Fabrication of GaN Pillars Using Focused Ion Beam Etching
- 22 November 1999
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 176 (1), 355-358
- https://doi.org/10.1002/(sici)1521-396x(199911)176:1<355::aid-pssa355>3.0.co;2-i
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Reliability of GaN Metal Semiconductor Field-Effect Transistor at High TemperatureJapanese Journal of Applied Physics, 1998
- Gain characteristics of InGaN/GaN quantum well diode lasersApplied Physics Letters, 1998
- Smooth n-type GaN surfaces by photoenhanced wet etchingApplied Physics Letters, 1998
- InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrateApplied Physics Letters, 1998
- Ar+-ion milling characteristics of III-V nitridesJournal of Applied Physics, 1994