Frequency and temperature dependent dielectric properties of Al/Si3N4/p-Si(100) MIS structure
- 31 January 2007
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 84 (1), 124-128
- https://doi.org/10.1016/j.mee.2006.09.001
Abstract
No abstract availableKeywords
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