Gate metallization "Sinking" into the active channel in Ti/W/Au metallized power MESFET's
- 1 March 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 7 (3), 185-187
- https://doi.org/10.1109/edl.1986.26338
Abstract
Commercial power MESFET's with Ti/W/Au gate metallization show a failure mode consisting of a decrease in Idssand Vpand an increase in R0. The failure mechanism was investigated by electrical and structural analyses with SEM, microprobe, and Auger spectrometry, and turns out to be a thermally activated Au-GaAs interdiffusion leading to encroachment of the gate metal on the channel. This may be common to all Au-metallized MESFET's and can lead to burn-out of devices.Keywords
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