Microscopy Of Semi‐Insulating Gallium Arsenide
- 1 January 1980
- journal article
- Published by Wiley in Journal of Microscopy
- Vol. 118 (1), 111-116
- https://doi.org/10.1111/j.1365-2818.1980.tb00253.x
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Carbon, oxygen and silicon impurities in gallium arsenideJournal of Physics D: Applied Physics, 1978
- On annealing-induced prismatic dislocation loops and electrical changes in heavily Te-doped GaAsPhysica Status Solidi (a), 1978
- The identification of saucer-pit (S-pit) defects in GaAsJournal of Materials Science, 1978
- A review of etching and defect characterisation of gallium arsenide substrate materialThin Solid Films, 1976
- Interstitial condensation in n+ GaAsJournal of Materials Science, 1975
- A simple rotating jet-thinning apparatus for producing taper sections and electron microscope specimens from silicon and compound semiconductorsJournal of Physics D: Applied Physics, 1973
- A dislocation „etch-memory” effect in gallium arsenidePhysica Status Solidi (a), 1973
- Selective Etching of Gallium Arsenide Crystals in H[sub 2]SO[sub 4]-H[sub 2]O[sub 2]-H[sub 2]O SystemJournal of the Electrochemical Society, 1971
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965
- Application à la métallographie des méthodes interférentielles à deux ondes polariséesRevue de Métallurgie, 1955