The GaAs/Zn solidus at 1000 degrees C
- 1 October 1976
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 9 (14), 2061-2073
- https://doi.org/10.1088/0022-3727/9/14/015
Abstract
A mass-action formulation is used to calculate the shape of the GaAs/Zn solidus at 1000 degrees C. The equilibrium constants are determined using experimental results for the solubility of zinc in GaAs. Recently published data on the electrical properties of annealed GaAs are also employed. It is assumed that the principal defects apart from substitutional zinc are charged and uncharged gallium and arsenic monovacancies. The concentrations of these defects are calculated for all points along the solidus line and hence the form of the solidus is derived. The results are compared with a previous theoretical determination for pure GaAs.Keywords
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