Improved Heterointerface and Vertical Transport in GaAs Single Quantum Well Confined by All-Binary GaAs/AlAs Short-Period-Superlattices
- 1 June 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (6A), L405
- https://doi.org/10.1143/jjap.24.l405
Abstract
GaAs single quantum well heterostructures (SQWH) confined by all-binary GaAs/AlAs short-period-superlattices (SPS) and by ternary Al x Ga1-x As alloy were grown by molecular beam epitaxy. The results of detailed photoluminescence measurements under direct and indirect excitation conditions and of excitation spectroscopy measurements at 2 K indicate that the SPS confined SQWH exhibit superior luminescence properties due to improved binary/binary heterointerfaces and a specific vertical transport of photoexcited carriers through SPS by tunneling.Keywords
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