An effect of poor vacuum conditions on the analysis of thin films by Rutherford backscattering
- 31 July 1975
- journal article
- research article
- Published by Elsevier in Thin Solid Films
- Vol. 28 (1), L1-L4
- https://doi.org/10.1016/0040-6090(75)90283-7
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Thin-film analysis using Rutherford scatteringJournal of Physics D: Applied Physics, 1974
- 16O contamination in 4He analysis beamsThin Solid Films, 1973
- Principles and applications of ion beam techniques for the analysis of solids and thin filmsThin Solid Films, 1973
- Ion-backscattering analysis of tungsten films on heavily doped SiGeJournal of Applied Physics, 1972
- Low-Temperature Migration of Silicon in Metal Films on Silicon Substrates Studied by Backscattering TechniquesJournal of Vacuum Science and Technology, 1972
- Loss of electrons from fast nitrogen ions in collisions with single gas moleculesJournal of Computers in Education, 1955