GaInAsP/InP Semiconductor Multilayer Reflector Grwon by Metalorganic Chemical Vapor Deposition and its Application to Surface Emitting Laser Diode
- 1 July 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (7A), L1130
- https://doi.org/10.1143/jjap.29.l1130
Abstract
A GaInAsP/InP multilayer reflector was fabricated by low pressure metalorganic chemical vapor deposition. Peak reflectivity of as high as 0.98 was obtained, which was in good agreement with the calculated value. This multilayer reflector was applied to a 1.5 µm GaInAsP/InP vertical cavity surface emitting laser diode, and room temperature pulsed oscillation was achieved for the first time with a threshold current density of 124 kA/cm2.Keywords
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