Realisation of highly efficient 850 nm top emitting resonant cavity light emitting diodes
- 1 January 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (18), 1564-1565
- https://doi.org/10.1049/el:19991052
Abstract
Highly efficient top emitting 850 nm resonant cavity LEDs (RCLEDs) with and without selectively oxidised current windows have been realised and compared. The oxidised RCLEDs have an increased efficiency, due to a larger carrier injection efficiency. The best devices show a 14% overall quantum efficiency, and a voltage drop of 1.8 V at 3 mA drive current.Keywords
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