Cobalt disilicide: Crystal growth and physical properties
- 1 November 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 69 (1), 207-210
- https://doi.org/10.1016/0022-0248(84)90031-9
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Electrical properties of thin Co2Si, CoSi, and CoSi2 layers grown on evaporated siliconJournal of Electronic Materials, 1984
- Crystal growth of refractory compounds from solutions in metallic meltsProgress in Crystal Growth and Characterization, 1983
- Study of the uniformity and stoichiometry of CoSi2 films using Rutherford backscattering spectroscopy and scanning electron microscopyApplied Physics Letters, 1983
- Liquid phase growth of epitaxial Ni and Co silicidesApplied Physics Letters, 1983
- Bonding and structure of Coand NiPhysical Review B, 1983
- Growth of single crystal epitaxial silicides on silicon by the use of template layersApplied Physics Letters, 1983
- Epitaxial growth of elemental semiconductor films onto silicide/Si and fluoride/Si structuresJournal of Vacuum Science & Technology B, 1983
- Photoemission and band-structure results for NiPhysical Review B, 1982
- Growth of single-crystal CoSi2 on Si(111)Applied Physics Letters, 1982
- Silicon/metal silicide heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1980