Millimeter-wave low-noise HEMT amplifiers
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Ultra-low noise characteristics of millimeter-wave high electron mobility transistorsIEEE Electron Device Letters, 1988
- Ultra-low-noise cryogenic high-electron-mobility transistorsIEEE Transactions on Electron Devices, 1988
- Millimeter-wave performance of ultrasubmicrometer-gate field-effect transistors: A comparison of MODFET, MESFET, and PBT structuresIEEE Transactions on Electron Devices, 1987
- Advances in HEMT Technology and ApplicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- 35 GHz Low Noise HEMT AmplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- A Four Stage V-Band MOCVD HEMT AmplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- High-efficiency millimeter-wave GaAs/GaAlAs power HEMT'sIEEE Electron Device Letters, 1986
- 60 GHz low-noise high-electron-mobility transistorsElectronics Letters, 1986
- Electron-beam fabrication of GaAs low-noise MESFET's using a new trilayer resist techniqueIEEE Transactions on Electron Devices, 1985
- HEMT 60 GHz amplifierElectronics Letters, 1985