Crystalline quality of heteroepitaxial silicon on epitaxial NiSi2/Si(100)
- 1 January 1990
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 41-42, 262-265
- https://doi.org/10.1016/0169-4332(89)90067-6
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Thin metallic silicide films epitaxially grown on Si(111) and their role in Si–metal–Si devicesJournal of Vacuum Science & Technology A, 1987
- Expitaxial metal–semiconductor structures and their propertiesJournal of Vacuum Science & Technology B, 1986
- EPITAXIAL GROWTH OF NICKEL SILICIDE LAYERS ON SILICON BY ELECTRON BEAM ANNEALINGMRS Proceedings, 1985
- Growth of single crystal epitaxial silicides on silicon by the use of template layersApplied Physics Letters, 1983
- The effects of nucleation and growth on epitaxy in the CoSi2/Si systemThin Solid Films, 1982