Charge neutrality in semiconductors with implanted impurity profiles
- 31 July 1971
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (7), 603-611
- https://doi.org/10.1016/0038-1101(71)90136-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Range of implanted boron, phosphorus, and arsenic in siliconCanadian Journal of Physics, 1969
- On the Measurement of Impurity Atom Distributions by the Differential Capacitance Technique [Letter to the Editor]IBM Journal of Research and Development, 1969
- On the Measurement of Impurity Atom Distributions in Silicon by the Differential Capacitance TechniqueIBM Journal of Research and Development, 1968
- Impurity distribution profiles in ion-implanted siliconCanadian Journal of Physics, 1968
- Ion implantation in semiconductors—Part I: Range distribution theory and experimentsProceedings of the IEEE, 1968
- DEEP (1–10 μ) PENETRATION OF ION-IMPLANTED DONORS IN SILICONApplied Physics Letters, 1966