Optical assessment of the main electron trap in bulk semi-insulating GaAs
- 1 November 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (9), 747-748
- https://doi.org/10.1063/1.92852
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Compensation mechanisms in GaAsJournal of Applied Physics, 1980
- Spectroscopies thermique et optique des niveaux profonds : Application à l'étude de leur relaxation de réseauRevue de Physique Appliquée, 1980
- Direct evidence for the nonassignment to oxygen of the main electron trap in GaAsJournal of Applied Physics, 1979
- Auger de-excitation of a metastable state in GaAsSolid State Communications, 1979
- Measurement of the chromium concentration in semi-insulating GaAs using optical absorptionJournal of Applied Physics, 1979
- Photocapacitance quenching effect for “oxygen” in GaAsSolid State Communications, 1978
- Net Optical Quenching Spectrum and Disappearance of Stationary High-Field Domain in GaAs: Cr single CrystalJapanese Journal of Applied Physics, 1978
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Photoelectronic properties of high-resistivity GaAs : OJournal of Applied Physics, 1976