A tight binding analysis of the step-dependent density of 〈111〉 surface states for covalent semiconductors
- 30 April 1977
- journal article
- Published by Elsevier in Surface Science
- Vol. 64 (1), 278-292
- https://doi.org/10.1016/0039-6028(77)90272-2
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Self-Consistent Pseudopotential Calculations on Si(111) Unreconstructed and (2×1) Reconstructed SurfacesPhysical Review Letters, 1975
- On the question of surface states on cleaved GaAs(110) surfacesSurface Science, 1975
- Photoemission Partial Yield Measurements of Unoccupied Intrinsic Surface States for Ge(111) and GaAs(110)Physical Review Letters, 1974
- Surface state band on GaAs (110) faceApplied Physics Letters, 1974
- Realistic Tight-Binding Calculations of Surface States of Si and Ge (111)Physical Review Letters, 1974
- Tight-binding calculations of surface states of Si(111)Solid State Communications, 1974
- Surface and Bulk Contributions to Ultraviolet Photoemission Spectra of SiliconPhysical Review Letters, 1974
- Photoemission measurement of surface states for annealed siliconPhysics Letters A, 1974
- Observation of a Band of Silicon Surface States Containing One Electron Per Surface AtomPhysical Review Letters, 1972
- Intrinsic Surface States in Semiconductors. I. Diamond-Type CrystalsJournal of the Physics Society Japan, 1969