Memory using diode-coupled bipolar transistor cells
- 1 October 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 5 (5), 186-191
- https://doi.org/10.1109/jssc.1970.1050111
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- 100-ns electronically variable semiconductor memory using two diodes per memory cellIEEE Journal of Solid-State Circuits, 1970
- Simplified bipolar technology and its application to systemsIEEE Journal of Solid-State Circuits, 1970
- Low-power bipolar transistor memory cellsIEEE Journal of Solid-State Circuits, 1969
- A main frame semiconductor memory for fourth generation computersPublished by Association for Computing Machinery (ACM) ,1969
- Large-capacity semiconductor memoryProceedings of the IEEE, 1968
- Making integrated electronics technology workIEEE Spectrum, 1968
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