Laser pulse energy dependence of annealing in ion implanted Si and GaAs semiconductors
- 20 February 1978
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 65 (2), 153-155
- https://doi.org/10.1016/0375-9601(78)90602-3
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Lattice location of Te in laser-annealed Te-implanted siliconJournal of Applied Physics, 1978
- Amorphous-polycrystal transition induced by laser pulse in self-ion implanted siliconApplied Physics A, 1977
- Reordering of implanted amorphous layers in gaasRadiation Effects, 1977
- Regrowth behavior of ion-implanted amorphous layers on 〈111〉 siliconApplied Physics Letters, 1976