Barrier Inhomogeneities on a Si–SiO2 Interface by Scanning Internal Photoemission
- 15 October 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (8), 280-282
- https://doi.org/10.1063/1.1653918
Abstract
Scanning internal photoemission has been used to map barrier inhomogeneities in a sodium‐contaminated Si–SiO2 interface. The interface barrier is lowered in local regions at which sodium accumulates.Keywords
This publication has 11 references indexed in Scilit:
- Dielectric Theory of the Barrier Height at Metal-Semiconductor and Metal-Insulator InterfacesPhysical Review B, 1971
- PHOTOEMISSION STUDIES OF INTERFACE BARRIER ENERGIES OF IRRADIATED MOS STRUCTURESApplied Physics Letters, 1970
- Interface Barrier Energy Determination from Voltage Dependence of Photoinjected CurrentsJournal of Applied Physics, 1970
- Photoinjection into SiO2: Use of Optical Interference to Determine Electron and Hole ContributionsJournal of Applied Physics, 1969
- EFFECT OF HEATING UNDER BIAS ON PHOTOELECTRIC THRESHOLD IN MOS STRUCTUREApplied Physics Letters, 1968
- Photoemission of Electrons from-Type Degenerate Silicon into Silicon DioxidePhysical Review B, 1966
- Barrier energies in metal-silicon dioxide-silicon structuresJournal of Physics and Chemistry of Solids, 1966
- Photoemission of Electrons from Silicon and Gold into Silicon DioxidePhysical Review B, 1966
- Position Operators in Relativistic Single-Particle TheoriesPhysical Review B, 1965
- Photoemission of Electrons from Silicon into Silicon DioxidePhysical Review B, 1965