MOSFET scaling into the 10 nm regime
- 30 November 2000
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 28 (5-6), 351-355
- https://doi.org/10.1006/spmi.2000.0933
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Nanoscale CMOSProceedings of the IEEE, 1999
- Nanoscale field-effect transistors: An ultimate size analysisApplied Physics Letters, 1997
- Elementary scattering theory of the Si MOSFETIEEE Electron Device Letters, 1997
- Ultrafast operation of V/sub th/-adjusted p/sup +/-n/sup +/ double-gate SOI MOSFET'sIEEE Electron Device Letters, 1994