Nuclear Resonance Spectrometers Using Field Effect Transistors
- 1 April 1971
- journal article
- research article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 42 (4), 462-465
- https://doi.org/10.1063/1.1685130
Abstract
We describe the use of field effect transistors of both the metal‐oxide‐semiconductor and the n‐channel junction type in marginal oscillator circuits designed respectively for the observation of NMR in the range 2–60 MHz and NQR in the range 3–40 MHz.Keywords
This publication has 14 references indexed in Scilit:
- A 3 MHz NQR SpectrometerReview of Scientific Instruments, 1970
- Liquid Helium Temperature cw NMR S/N Improvement Using a MOSFET rf AmplifierReview of Scientific Instruments, 1970
- On the high frequency excess noise and equivalent circuit representation of the MOS-FET with n-type channelSolid-State Electronics, 1969
- Precision Thermometer for the Region 10–40 KReview of Scientific Instruments, 1969
- Helium Cooled Radio Frequency Preamplifier for Use in NMRReview of Scientific Instruments, 1968
- NQR Spectrometer Using Field Effect TransistorsReview of Scientific Instruments, 1968
- Test of the thermal-noise hypothesis in m.o.s.f.e.t.sElectronics Letters, 1968
- Field Effect Transistor in Nuclear Quadrupole Resonance SpectrometersReview of Scientific Instruments, 1968
- Pure Nuclear Quadrupole Spectra of Chlorine and Antimony Isotopes in SolidsPhysical Review B, 1955
- A Radiofrequency Spectrograph and Simple Magnetic-Field MeterReview of Scientific Instruments, 1950