The electrical activity of phosphorus channelled into silicon
- 1 January 1970
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 6 (2), 237-245
- https://doi.org/10.1080/00337577008236302
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- The measurement of electrical activity and Hall mobility of boron and phosphorus ion-implanted layers in silicon†International Journal of Electronics, 1969
- Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scatteringCanadian Journal of Physics, 1968
- Implantation profiles of 32P channeled into silicon crystalsCanadian Journal of Physics, 1968
- Influence des défauts sur la canalisation d'ions de phosphore dans le siliciumJournal de Physique, 1968
- Crystal wafer orientation by proton channellingJournal of Scientific Instruments, 1967
- Doping of silicon by ion implantationNuclear Instruments and Methods, 1965
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962
- Growth of Silicon Crystals Free from DislocationsJournal of Applied Physics, 1959