Low-temperature molecular beam epitaxy of gallium arsenide
- 16 March 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (11), 694-695
- https://doi.org/10.1063/1.98069
Abstract
Device quality GaAs was grown at substrate temperatures as low as 430 °C, by decreasing the growth rate to 0.2 μm/h and by using dimeric arsenic. Precise doping control down to 1×1016 cm−3 has been easily achieved and Hall mobilities of up to 66% of the best molecular beam epitaxy values have been measured. By contrast, the use of As4 under the same growth conditions led to films with poor electrical and optical properties. These results add further evidence to the superiority of As2 in reducing the concentration of compensation deep levels, and provide the first conclusive evidence of its significant role in the low-temperature growth of high quality GaAs.Keywords
This publication has 4 references indexed in Scilit:
- Thermal stability of epitaxial Al/GaAs Schottky barriers prepared by molecular-beam epitaxyJournal of Applied Physics, 1986
- Effects of very low growth rates on GaAs grown by molecular beam epitaxy at low substrate temperaturesApplied Physics Letters, 1983
- A correlation between electron traps and growth processes in n-GaAs prepared by molecular beam epitaxyApplied Physics Letters, 1980
- Growth-parameter dependence of deep levels in molecular-beam-epitaxial GaAsElectronics Letters, 1980