Thyristors and rectifier diodes-the semiconductor workhorses
- 1 August 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Spectrum
- Vol. 4 (8), 102-111
- https://doi.org/10.1109/mspec.1967.5215532
Abstract
Power semiconductor devices have become one of the main bridges between the electrical and electronic equipment technologies. They are being used increasingly in every phase of generation, distribution, and consumption of electric power. This article surveys the various types of components, their applications, and the outlook for the future. The stress is on thyristors and silicon rectifier diodes, which exhibit electrical characteristics that are uniquely tailored to ac utility power systems.Keywords
This publication has 21 references indexed in Scilit:
- Effect of surface fields on the breakdown voltage of planar silicon p-n junctionsIEEE Transactions on Electron Devices, 1967
- High-voltage planar p-n junctionsProceedings of the IEEE, 1967
- Reverse recovery processes in silicon power rectifiersProceedings of the IEEE, 1967
- Silicon power device material problemsProceedings of the IEEE, 1967
- Second breakdown—A comprehensive reviewProceedings of the IEEE, 1967
- p-n-p-n charge dynamicsProceedings of the IEEE, 1967
- Pressure Contact Semiconductor DevicesIEEE Transactions on Industry and General Applications, 1966
- Commutation Behavior of Diffused High-Current Rectifier DiodesIEEE Transactions on Industry and General Applications, 1965
- Control of electric field at the surface of P-N junctionsIEEE Transactions on Electron Devices, 1964
- A fatigue-free silicon device structureTransactions of the American Institute of Electrical Engineers, Part I: Communication and Electronics, 1961