Current collapse induced in AlGaN/GaN HEMTs by short-term DC bias stress
- 22 December 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
GaN HEMTs grown by MOCVD and by MBE were subjected to short term bias-stress. Current collapse was found to be induced in most of the devices after stress, apparently caused by the generation or activation of trapping centers.Keywords
This publication has 6 references indexed in Scilit:
- Bias Stress Measurements on High Performance AlGaN/GaN HFET DevicesPhysica Status Solidi (a), 2001
- Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxyApplied Physics Letters, 2001
- Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistorsElectronics Letters, 2001
- Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistorsApplied Physics Letters, 1999
- Fabrication and characterization of GaN FETsSolid-State Electronics, 1997
- Evidence of interface trap creation by hot-electrons in AlGaAs/GaAs high electron mobility transistorsApplied Physics Letters, 1996