High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN

Abstract

Solar-blind ultraviolet photodiodes with a band-edge wavelength of 285 nm were fabricated on laterally epitaxially overgrown GaN grown by metalorganic chemical vapor deposition. Current–voltage measurements of the diodes exhibited dark current densities as low as 10 nA/cm 2 at −5 V . Spectral response measurements revealed peak responsivities of up to 0.05 A/W. Response times for these diodes were measured to be as low as 4.5 ns for 90%-to-10% fall time. For comparison, diodes were fabricated using the same p–i–n structure deposited on dislocated GaN. These diodes had dark current densities many orders of magnitude higher, as well as a less sharp cutoff, and a significant slow tail under impulse excitation.