Current noise in N-type AlxGa1 −xAs
- 1 February 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (2), 279-282
- https://doi.org/10.1016/0038-1101(88)90143-8
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Low frequency noise measurements as a tool to analyze deep-level impurities in semiconductor devicesSolid-State Electronics, 1987
- A new model of deep donor centres in AlxGa1-xAsSemiconductor Science and Technology, 1987
- Theory of theDXcenter inAs and GaAs crystalsPhysical Review B, 1986
- GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applicationsJournal of Applied Physics, 1985
- Photoluminescence excitation of Saxena's deep donor in AlGaAsJournal of Physics C: Solid State Physics, 1984
- Non‐Γ Deep Levels and the Conduction Band Structure of Ga1−xAlxAs AlloysPhysica Status Solidi (b), 1981
- The conduction band structure and deep levels in Ga1-xAlxAs alloys from a high-pressure experimentJournal of Physics C: Solid State Physics, 1980
- Symmetry of Electron States in GaPPhysical Review Letters, 1968