Photoluminescence excitation of Saxena's deep donor in AlGaAs
- 10 December 1984
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 17 (34), L915-L921
- https://doi.org/10.1088/0022-3719/17/34/004
Abstract
The deep donor level, deduced by Saxena from temperature- and pressure-dependent Hall measurements, has been identified by photoluminescence (PL) of Si-doped AlxGa1-xAs. Its PL signal can be enhanced by selective excitation to an excited state of this centre. For 0.20<x<0.55 the excited state has a constant separation of 106 meV from the L minimum of the conduction band. The ionization depth of the ground state (referred to the L minimum) varies from 225 to 175 meV in this composition range.Keywords
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