Theory of hydrogen evolution in amorphous hydrogenated silicon: Comparison with experiments
- 1 January 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 87 (4), 347-364
- https://doi.org/10.1016/0040-6090(82)90288-7
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Possible configurational model for hydrogen in amorphous Si:H. An exodiffusion studyPhysical Review B, 1981
- Kinetic analysis of hydrogen evolution from reactively sputtered amorphous silicon-hydrogen alloysPhysical Review B, 1980
- Post-hydrogenation of CVD deposited a-Si filmsJournal of Non-Crystalline Solids, 1980
- Defect creation and hydrogen evolution in amorphous Si:HJournal of Non-Crystalline Solids, 1980
- The hydrogen content of a-Ge:H and a-Si:H as determined by ir spectroscopy, gas evolution and nuclear reaction techniquesJournal of Non-Crystalline Solids, 1980
- Hydrogen evolution and defect creation in amorphous Si: H alloysPhysical Review B, 1979
- Thermal stability and decomposition kinetics of amorphous hydrogenated filmsThin Solid Films, 1979
- A SIMS analysis of deuterium diffusion in hydrogenated amorphous siliconApplied Physics Letters, 1978
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977
- Quantitative analysis of hydrogen in glow discharge amorphous siliconApplied Physics Letters, 1977