Stacking-fault model for the Si(111)-(7×7) surface
- 15 September 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 28 (6), 3656-3659
- https://doi.org/10.1103/physrevb.28.3656
Abstract
We propose a model for the geometric structure of the Si(111)-(7×7) surface based on a stacking fault in the surface layers. The model quantitatively accounts for existing ion-channeling data. Additional evidence for the stacking fault is given by constant-momentum-transfer averaged low-energy electron-diffraction data. A specific class of superlattice structures is suggested by the occurrence of two nearly equivalent stacking sequences having triangular symmetry.Keywords
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